*rohs directive 2002/95/ec jan 27 2003 including annex november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 tisp3600f3, tisp3700f3 dual bidirectional thyristor overvoltage protectors sl package (top view) device symbol description these devices are designed to limit overvoltages between systems and so protect their insulation. a single device can be used i n two ways; as a 3-point protector or as a 2-point protector. in the 3-point mode, the g terminal is connected to the system protecti ve ground and the r and t terminals are connected to the two conductors being protected. for the tisp3600f3, each conductor will have its volt- age limited to 600 v from the protective ground. the maximum inter-conductor voltage will be limited to 1200 v. in the 2-point mode, only the outer r and t terminals are connected and the g terminal is unconnected. the tisp3700f3 limits th e volt- age between the two connection nodes to 1400 v with voltage limiting beginning above 1000 v. two tisp3700f3 devices connected in series would allow insulation testing to 2000 v ( 1400 vrms ). the protector consists of two symmetrical voltage-triggered bidirectional thyristors with a common connection. overvoltages are normal- ly caused by a.c. power system or lightning flash disturbances which are coupled on to the system. these overvoltages are initi ally clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-vol tage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. th e high crowbar holding current prevents d.c. latchup as the diverted current subsides. the tisp3x00f3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. how to order ieee std 802.3 lan and man applications ion-implanted breakdown region precise and stable voltage rated for international surge wave shapes 1 2 3 t g r mdxxagb g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c terminals t &g, r&g t & r device v drm v v (bo) v v drm v v (bo) v ?600 420 600 840 1200 ?700 500 700 1000 1400 wave shape standard i tsp a 2/10 gr-1089-core 190 8/20 iec 61000-4-5 175 10/160 fcc part 68 110 10/700 fcc part 68 itu-t k.20/21 70 10/560 fcc part 68 50 10/1000 gr-1089-core 45 device package carrier tisp3600f3 sl, single-in-line tube tisp3700f3 sl, single-in-line tube tisp3600f3sl-s TISP3700F3SL-S order as *rohs compliant obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 absolute maximum ratings, t a = 25 ? (unless otherwise noted) recommended operating conditions rating symbol value unit repetitive peak off-state voltage, (r-g or t-g value) tisp3600f3 tisp3700f3 v drm 420 500 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 190 1/20 (i tu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 100 8/20 (i ec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (f cc part 68, 10/160 voltage wave shape) 110 4/250 (i tu-t k.20/21, 10/700 voltage wave shape, simultaneous) 95 5/310 (i tu-t k.20/21, 10/700 voltage wave shape, single) 70 5/320 (f cc part 68, 9/720 voltage wave shape, single) 70 10/560 (f cc part 68, 10/560 voltage wave shape) 50 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 45 non-repetitive peak on-state current (see notes 1 and 2) i tsm 6a 50/60hz, 1s initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially, the tisp?device must be in thermal equilibrium with t j =25 c. 2. these non-repetitive rated currents are peak values of either polarirty. the rated current values may be applied to the r or t terminals. additionally, both r and t terminals may have their rated current values applied simultaneously (in this case the g terminal return current will be the sum of the currents applied to the r and t terminals). the surge may be repeated after the tisp returns to its initial conditions. component min typ max unit r1, r2 series resistor for gr-1089-core first-level surge survival series resistor for itu-t recommendation k.20 and k.21 series resistor for fcc part 68 9/720 survival series resistor for fcc part 68 10/160, 10/560 survival 15 0 0 10 ? electrical characteristics for the t and r terminals, t a = 25 ? parameter test conditions min typ max unit i drm repetitive peak off- state current v d = 2v drm 10 a v (bo) breakover voltage dv/dt = 700 v/ms, r sour ce = 300 ? tisp3600f3 tisp3700f3 1200 1400 v i (bo) breakover current dv/dt = 700 v/ms, r sour ce = 300 ? 0.1 a i h holding current i t = 5a, di/dt=+/-30ma/ms 0.15 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 1.7v drm 5 kv/ s i d off-state current d = 50 v v 10 a obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 electrical characteristics for the t and r terminals, t a = 25 ? (continued) c off off-state capacitance f = 100 khz, v d =1v rms, v d = 0, (see note 3) 0.1 pf note 3: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the third termin al is connected to the guard terminal of the bridge. parameter test conditions min typ max unit electrical characteristics for the t and g or the r and g terminals, t a = 25 ? parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm 5 a v (bo) breakover voltage dv/dt = 700 v/ms, r sour ce = 300 ? tisp3600f3 tisp3700f3 600 700 v i (bo) breakover current dv/dt = 700 v/ms, r sour ce = 300 ? 0.1 a i h holding current i t = 5a, di/dt=+/-30ma/ms 0.15 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/ s i d off-state current v d = 50 v 10 a c off off-state capacitance f = 100 khz, v d =1v rms, v d = 0, (see note 4) f = 100 khz, v d =1v rms, v d =-50v 44 11 74 20 pf note 4: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the third terminal is connected to the guard terminal of the bridge. thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 5) 50 c/w note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths. obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 parameter measurement information figure 1. voltage-current characteristic for r-g and t-g terminal pairs -v i h i tsm i tsp v drm i drm v d v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxah a i figure 2. voltage-current characteristic for r-t terminal pair -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxaj a v drm i drm obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics figure 3. off-state current t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0?01 0?1 0? 1 10 100 tc3laf junction temperature vs v d = -50 v v d = 50 v figure 5. holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 i h - ho a lding current - 0.2 0.3 0.4 0.5 0.1 tc3laha figure 4. normalized breakover voltage vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc3maia tisp3600f3, tisp3700f3 obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 thermal information figure 6. non-repetitive peak on-state current vs current duration t - current duration - s 0 1 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 1 10 ti4fa a v gen = 1500 v rms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb, t a = 25 c simultaneous operation of r and t terminals. g terminal current = 2xi tsm(t) obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 applications information iec 60950, en 60950, ul 1950 and csa 22.2 no.950 the ?50 family of standards have certain requirements for equipment (eut) with incoming lines of telecommunication network vol tage (tnv). any protector from a tnv conductor to protective ground must have a voltage rating of at least 1.6 times the equipment r ated supply voltage (figure 7). the intent is to prevent the possibility of the a.c. main supply voltage from feeding into the telec ommunication network and creating a safety hazard. international and european equipment usually have a maximum rated voltage of 230 v rms, 2 40 v rms or 250 v rms. multiplying the 250 v value by 1.6 gives a protector v drm value of 400 v. allowing for operation down 0 ? gives a v drm requirement of 420 v at 25 ?. this need is met by the tisp3600f3. lan system insulation protection some wired systems are not directly connected to ground and are either floating or have a high resistance to ground. induced tr ansients may cause high voltages relative to ground, resulting in arcing across insulation at wiring junctions. arcing often leaves carb onized tracks which can degrade system performance. where the system is carrying a power feed, current conduction through the carboniz ed track may cause a safety hazard. in figure 8, a low-protector, th1, from a tisp4xxx series limits the differential conductor voltage of the system. the use of a diode bridge, d1 through d4, reduces the capacitive loading of the protectors on the system and can be extended to protect more condu ctors as shown by the dotted diodes d5 and d6. low voltage diodes can be used as the maximum reverse voltage stress is limited to the v (bo) value of the tisp4xxx protector plus the diode forward recovery voltage. steering diodes d7 and d8 and high-voltage protector t h2 limit the conductor voltage to ground. the limiting voltage is set by the choice of protector, tisp3600f3, 1200 v or tisp3700f3, 1400 v, and the number connected in series (one extra protector th3 shown dotted). figure 7. '950 tnv network insulation from protective ground ac supply protective ground connection eut insulation overvoltage protection bridging insulation te lecommunication network connectio n th2 tisp3600f3 th1 ai3xac figure 8. system insulation protection tisp 4xxx system conductors d3 d4 d1 d2 th1 ai3xab d7 d8 d5 d6 tisp 3x00f3 th3 th2 tisp 3x00f3 obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 applications information lan system insulation protection (continued) ieee std 802.3, 2000 edition (ieee standard for information technology?telecommunications and information exchange between sys- tems?local and metropolitan area networks?specific requirements, part 3: carrier sense multiple access with collision detecti on (csma/cd) access method and physical layer specifications) specifies three network insulation withstands: 1.5 kv rms a.c., 2.25 kv d.c. and 2.4 kv 1.2/50 impulse. under these conditions there shall be no insulation breakdown, as defined in iec 60950:1991. also, t here is a 2 m ? insulation resistance minimum requirement measured at 500 v d.c. (250 a maximum). in figure 8, at least one protection element of a tisp3700f3 must be used to give the 500 v working voltage (v drm ) to meet the insula- tion resistance requirement. to avoid breakover during the 2.4 kv impulse test, five tisp3700f3 protection elements (2.5 kv v drm , 2-1/2 sl packages) or six tisp3600f3 elements (2.52 kv v drm , 3 sl packages) are required. transmitters are required to withstand a 1 kv 0.3/50 common-mode impulse. a tisp3700f3 (1 kv v drm ), from each conductor to ground at the transmitter, would not breakover during the impulse. bod replacement figure 9a shows a traditional overvoltage protection scheme for a high power switching thyristor, th1. the protection voltage l evel is set by a bod (breakover diode) thyristor. potentially damaging voltage transients cause the bod to crowbar which turns on thyristor th1. the on state of thyristor th1 causes the current drawn by the load from the d.c. voltage supply +v to continuously increase unt il the fast acting fuse f1 operates. resistor r1 limits the peak bod current and diode d1 protects the unidirectional bod against reverse polarity voltage. resistor r2 pro- vides a d.c. return, and with capacitor c1, forms a low pass network to prevent false triggering from noise. further trigger vo ltage dis- crimination and isolation is given by the series combination of zener diode d2 and reverse blocking diode d3. capacitor c2 and resistor r3 form the normal snubber network for the thyristor th1. figure 9b shows the tisp3x00f3 replacing the unidirectional bod and reverse polarity protection diode, d1. reverse polarity pro tection is not needed for the tisp3x00f3 as it is bidirectional. figure 9. thyristor protection n c1 d1 bod d2 d3 r1 r2 c2 r3 load f1 th1 gate drive c1 tisp 3x00f3 d2 d3 r1 r2 c2 r3 load f1 th1 gate drive +v +v a) b) ai3xaa obsolete
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3600f3, tisp3700f3 mechanical data device symbolization code devices will be coded as follows: device symbolization code tisp36 00f3 sp3600f3 tisp37 00f3 sp3700f3 ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. obsolete
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